inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor IRF245 description drain current i d =13a@ t c =25 drain source voltage- : v dss = 250v(min) static drain-source on-resistance : r ds(on) =0.28 (max) applications switching power supplies switching converters,motor driver,relay driver audio amplifier and servo motors absolute maximum ratings(t a =25 ) symbol parameter value unit v dss drain-source voltage (v gs =0) 250 v v gs gate-source voltage 20 v i d drain current-continuous@ t c =25 13 a p tot total dissipation@t c =25 125 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.0 /w r th j-a thermal resistance,junction to ambient 30 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor IRF245 electrical characteristics (t c =25 ) symbol parameter conditions min type max unit v (br)dss drain-source breakdown voltage v gs =0; i d =250 a 250 v v gs(th) gate threshold voltage v ds = v gs ; i d =250 a 2.0 4.0 v r ds(on) drain-source on-stage resistance v gs =10v; i d =8a 0.28 i gss gate source leakage current v gs = 20v;v ds =0 100 na i dss zero gate voltage drain current v ds =200v; v gs =0 250 a v sd diode forward voltage i s =13a; v gs =0 1.8 v c iss input capacitance v ds =25v; v gs =0v; f t =1mhz 1300 pf c rss reverse transfer capacitance 69 c oss output capacitance 320 t r rise time r gs =9.1 i d =14a; v dd =125v; r l =8.9 67 100 ns t d(on) turn-on delay time 16 24 t f fall time 49 74 t d(off) turn-off delay time 53 80 pdf pdffactory pro www.fineprint.cn
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